COPPER CMP*
*Barrier materials: Ta, TaN, TiN; Electroplate thickness ranges: 7KA-15KA Cu
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
---|---|---|---|---|---|
854/455 | Damascene CMP test mask contains serpentine structures of varying CD, density/pitch. Structures are electrically testable for quantitative measurement of dishing/erosion impact, have large arrays for profilometry/AFM, & are easily cleaveable for FIB/SEM imaging. Feature size range: 180nm up to 100um Design also contains a module with various dielectric slotting in large 100um metal lines for testing dishing vs. metal area. | 200 mm 300 mm | 180 nm | 5KA | · PETEOS · SiN · Silox · Coral · Black Diamond |
454 | 854 design with added tiling, SRAM cells, logic cells, variable linewidth serpentines, metrology boxes, VHORGs, RVB/BTS structures for voltage or thermal breakdown, & others, extended down to 100nm feature size | 200 mm 300 mm | 100 nm | ﹤3KA | · PETEOS · SiN · Silox · Coral · Black Diamond |
STI FILL CMP
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
---|---|---|---|---|---|
864 / 464 | STI CMP mask, including vertical & horizontal trenches at varying density | 200 mm & 300mm | 500nm | 5KA | · polySi · thermal oxide · SiN · TEOS or HDP oxide fill |
474 | STI CMP mask containing pattern rec features, various trench densities at vertical & horizontal orientation, posts/holes, litho/etch monitor module, & iso/dense trench module Feature sizes from 250nm up to 250um | 200 mm 300 mm | 250 nm | 3KA | · PETEOS · SiN · Silox · Coral · Black Diamond |
484 | STI CMP mask designed with input from CMP & material suppliers Includes enhanced metrology structures, various trench densities at vertical and horizontal orientation, isolated trench module, post/hole module, & SRAM test module Feature sizes from 130nm up to 500um | 200 mm 300 mm | 130 nm | 2KA | · PETEOS · SiN · Silox · Coral · Black Diamond |
ELECTRICAL TEST VEHICLES
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
---|---|---|---|---|---|
461 | Capacitance-voltage (CV dot) maskset Electrically testable, 2-layer set; includes clearfield and darkfield masks Dots 11um up to 3.5mm | 200 mm & 300mm | arge capacitors | ﹤4KA | request |
400 | Cu damascene design similar to 800 maskset, extended down to 130nm | 200mm, 300mm | 130nm interconnect | ﹤4KA | · PETEOS · SiN · Silox · Coral · Black Diamond |
465 | Cu damascene design similar to 800 maskset, extended down to 90nm | 200mm, 300mm | 90nm interconnect | ﹤3KA | · PETEOS · SiN · Silox · Coral · Black Diamond |
METROLOGY
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
---|---|---|---|---|---|
AMAG4L | Metrology pattern containing the following features: cleavable line/space from 50 to 1000nm, cleavable contacts from 150 to 1000nm, scatterometry structures, electrical LW structures, alignment targets and LER structures. | 200 mm & 300mm | 80nm L/S, 60nm isoL | request | request |
AMAG5L | Metrology pattern containing the following features: cleavable line/space from 30 to 250nm, cleavable contacts from 80 to 250nm, dummy fill patterns, line end shortening structures, alignment targets, scatterometry structures, phase imbalance structures and LER structures. | 200mm, 300mm | 70nm L/S, 45nm isoL | request | request |
OMAG4 | Designed to characterize optical overlay measurements and for use in the development of new optical overlay techniques. | 200 mm 300 mm | 100nm L/S | request | request |
TSV ETCH/FILL
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
---|---|---|---|---|---|
TSV | 193 TSV reticle field. Circular contact holes varying in diameter from 1 to 100um. Spacing includes 1:1, 1:2, 1:5 and ISO – both staggered and linear. Also includes structures with fixed spacing of 1um and 10um. | 200 mm | 1um | Si | |
1XTSV | 1X TSV mask. Circular contact holes varying in diameter from 1 to 100um. Spacing includes 1:1, 1:2, 1:5 and ISO – both staggered and linear. Also includes structures with fixed spacing of 1um and 10um. Note: Vias smaller than 5um are considered subnominal on this mask. | 200 mm | 6um | Si |
CALIBRATION
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
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Defect Calibration | Skorpios manufactures custom defect tool calibration wafers for many major equipment suppliers. Contact us for help in designing for your needs. | 200 mm & 300 mm | request | request | request |
Stage Movement Calibration | Skorpios manufactures custom stage calibration wafers for many major equipment suppliers. Contact us for help in designing for your needs. | 200 mm & 300 mm | request | request | request |
Optical Contrast Calibration | Skorpios manufactures custom stage calibration wafers for many major equipment suppliers. Contact us for help in designing for your needs. | 200 mm & 300 mm | request | request | request |
GENERAL PURPOSE
MASK SET | PRODUCT DESCRIPTION | WAFER SIZE | MINIMUM FEATURE SIZE | TYPICAL ETCH DEPTH | TYPICAL FILMS AVAILABLE |
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QCD | Cleavable line/space features from 100 to 2000nm with variable pitch. Electrically testable features are included. | 200 mm & 300 mm | 100nm | request | request |
QCE | Cleavable contact features from 140 to 600nm with variable pitch. | 200 mm & 300 mm | 160nm | request | request |
401 | Cleavable metrology pattern from 70nm to 500nm. Contains nine line/trench structures, nine electrically testable line width structures, six scatterometry structures, and eight VHorgs. | 200 mm & 300 mm | 90nm | request | request |
MEMS-RES | 1X resolution mask contains lines, spaces, vias and posts with variable pitch. Also includes fluidics structures and other representative MEMs patterns | 200 mm | 5um | request | request |